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FDS6690A
February 2007
FDS6690A
Single N-Channel, Logic-Level, PowerTrench(R) MOSFET
General Description
This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
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Features
* 11 A, 30 V. RDS(ON) = 12.5 m @ VGS = 10 V RDS(ON) = 17.0 m @ VGS = 4.5 V
* Fast switching speed * Low gate charge * High performance trench technology for extremely low RDS(ON) * High power and current handling capability
D D SO-8
D D
DD D D
5 6
4 3 2 1
Pin 1 SO-8
G SG S S SS S
TA=25oC unless otherwise noted
7 8
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD EAS TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed
Parameter
Ratings
30 20
(Note 1a)
Units
V V A W mJ C
11 50 2.5 1.0 96 -55 to +150
Power Dissipation for Single Operation Single Pulse Avalanche Energy
(Note 1a) (Note 1b) (Note 3)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RJA RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1b) (Note 1)
50 125 25
C/W
Package Marking and Ordering Information
Device Marking FDS6690A
(c)2007 Fairchild Semiconductor Corporation
Device FDS6690A
Reel Size 13''
Tape width 12mm
Quantity 2500 units
FDS6690A Rev E1 (W)
FDS6690A
Electrical Characteristics
Symbol
BVDSS BVDSS TJ IDSS IGSS VGS(th) VGS(th) TJ RDS(on)
TA = 25C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage
(Note 2)
Test Conditions
VGS = 0 V, ID = 250 A
Min Typ
30 25
Max
Units
V mV/C
Off Characteristics
ID = 250 A, Referenced to 25C VDS = 24 V, VGS = 20 V, VGS = 0 V VDS = 0 V 1 1.9 -5 9.8 12.0 13.7 50 48 1205 290 115 VGS = 15 mV, f = 1.0 MHz
(Note 2)
1 10 100 3
A A nA V mV/C
VDS = 24 V, VGS = 0 V, TJ=55C
On Characteristics
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
ID = 250 A VDS = VGS, ID = 250 A, Referenced to 25C VGS = 10 V, ID = 11 A ID = 10 A VGS = 4.5 V, VGS= 10 V, ID = 11 A, TJ=125C VGS = 10 V, VDS = 5 V, VDS = 15 V, f = 1.0 MHz VDS = 5 V ID = 11 A V GS = 0 V,
12.5 17.0 22.0
m
ID(on) gFS Ciss Coss Crss RG td(on) tr td(off) tf Qg Qgs Qgd IS VSD trr Qrr
A S pF pF pF 19 10 44 19 16 ns ns ns ns nC nC nC 2.1 0.74 24 27 1.2 A V nS nC
Dynamic Characteristics
2.4 9 5 28 9
Switching Characteristics
VDD = 15 V, VGS = 10 V,
ID = 1 A, RGEN = 6
VDS = 15 V, VGS = 5 V
ID = 11 A,
12 3.4 4.0
Drain-Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward VGS = 0 V, IS = 2.1 A (Note 2) Voltage Diode Reverse Recovery Time IF = 11 A, diF/dt = 100 A/s Diode Reverse Recovery Charge
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.
a)
50C/W when mounted on a 1in2 pad of 2 oz copper
b) 125C/W when mounted on a minimum pad.
Scale 1 : 1 on letter size paper
2 Test: Pulse Width < 300s, Duty Cycle < 2.0% 3. Starting TJ = 25C, L = 3mH, IAS = 8A, VDD = 30V, VGS = 10V
FDS6690A Rev E1 (W)
FDS6690A
Typical Characteristics
50
VGS = 10V
40
ID, DRAIN CURRENT (A)
3
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
4.0V
VGS = 3.0V 2.5
6.0V
4.5V
3.5.V
30
2
3.5V
20
1.5
4.0V
4.5V 6.0V 10V
10
3.0V
1
0 0 0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) 2
0.5 0 10 20 30 ID, DRAIN CURRENT (A) 40 50
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.05
1.8
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
RDS(ON), ON-RESISTANCE (OHM)
1.6 1.4 1.2 1 0.8 0.6 -50
ID = 11.0A VGS = 10V
ID = 5.5A
0.04
0.03
0.02
TA = 125 C
o
TA = 25 C
0.01
o
-25
0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (oC)
150
175
0 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10
Figure 3. On-Resistance Variation with Temperature.
50
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
100
IS, REVERSE DRAIN CURRENT (A)
VDS = 5V
40
ID, DRAIN CURRENT (A)
VGS = 0V
10 1 0.1 0.01 0.001
TA = 125 C
o
30
25 C
o
20
TA = 125 C
10
o
25 C -55 C
o
o
-55 C
o
0 1 1.5 2 2.5 3 VGS, GATE TO SOURCE VOLTAGE (V) 3.5 4
0.0001 0 0.2 0.4 0.6 0.8 1 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDS6690A Rev E1 (W)
FDS6690A
Typical Characteristics
10
1600 ID = 11.0A VDS = 10V 15V f = 1MHz VGS = 0 V
VGS, GATE-SOURCE VOLTAGE (V)
8 20V 6
CAPACITANCE (pF)
1200
Ciss
800
4
2
400
Coss
Crss
0 0 5 10 15 Qg, GATE CHARGE (nC) 20 25 0 0 5 10 15 20 25 VDS, DRAIN TO SOURCE VOLTAGE (V) 30
Figure 7. Gate Charge Characteristics.
100
Figure 8. Capacitance Characteristics.
100
100
ID, DRAIN CURRENT (A)
10
RDS(ON) LIMIT
100ms
1
VGS = 10V SINGLE PULSE o RJA = 125 C/W TA = 25 C
o
1s 10s
IAS, AVALANCHE CURRENT (A)
1ms 10ms
DC
10
Tj=25
0.1
0.01 0.01
0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V)
100
1 0.01
0.1
tAV, TIME IN AVALANCHE (mS)
Figure 9. Maximum Safe Operating Area.
Figure 10. Unclamped Inductive Switching Capability Figure
50
P(pk), PEAK TRANSIENT POWER (W)
40
30
20
10
0 0.001
0.01
0.1
t 1 , TIME (sec)
1
Figure 11. Single Pulse Maximum Power Dissipation.
Tj=125
1
10
100
SINGLE PULSE C/W R JA = 125 TA = 25 C
10
100
FDS6690A Rev E1 (W)
FDS6690A
Typical Characteristic
1
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
D = 0.5
0.2
0.1
0.1 0.05
R JA (t) = r(t) * R JA /W R JA = 125 P(pk) t1 t2
SINGLE PULSE
0.02 0.01
0.01
T J - T A = P * R JA (t) Duty Cycle, D = t 1 / t 2
0.001 0.0001
0.001
0.01
0.1
t1, TIME (sec)
1
10
100
1000
Figure 12. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design.
FDS6690A Rev E1 (W)
FDS6690A
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. FACT Quiet SeriesTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM ACExTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACT(R) FAST(R) FASTrTM FPSTM FRFETTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM TinyBoostTM TinyBuckTM TinyPWMTM TinyPowerTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHC(R) UniFETTM VCXTM WireTM
DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.
PRODUCT STATUS DEFINITIONS Definition of Terms
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
Datasheet Identification Advance Information
Product Status Formative or In Design First Production
Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I22
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
FDS6690A Rev E1 (W)

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